Authors
Zihao Song, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China.
Weibin Wang, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; College of Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Xiaohui Liu, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; University of Science and Technology of China, Hefei, 230026, China.
Xiaomin Han, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; University of Science and Technology of China, Hefei, 230026, China.
Yi Zhou, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
Rui Huang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
Yanxia Jiang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
Zhe Li, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China.Follow
Xiaowei Liu, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, ChinaFollow
Meiling Xiao, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; University of Science and Technology of China, Hefei, 230026, China.Follow
Hong-Gang Liao, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.Follow
Weilin Xu, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
Corresponding Author(s)
Zhe Li(zhe.li@siat.ac.cn);
Xiaowei Liu(xw.liu@siat.ac.cn);
Meiling Xiao(mlxiao@ciac.ac.cn);
Hong-Gang Liao(hgliao@xmu.edu.cn)
Abstract
Redistribution Layer (RDL), composed of layered dielectrics and electroplated copper materials, is a basic structure to rearrange numerous I/O pads on the chip surface in wafer-level advanced packaging. As the key chemicals in electrolyte baths, electroplating additives have undergone continuous development to meet the industrial needs for high-speed and fine-line/fine-pitch applications. Meanwhile, the intricate relationships between additive chemical structures and electroplated copper properties are yet to be well understood. In this work, a pair of triphenylmethane-based dye molecules, i.e. gentian violet (GV) and methyl green (MG), was comparatively investigated as levelers for high-speed RDL copper electroplating. Compared to GV, significantly stronger electrochemical polarization and tunable deposit morphology can be achieved by MG with just one extra quaternized amine terminal. Combining quantum chemical computations, in situ spectroelectrochemical analyses, and microstructural characterization, it is found that MG possesses enhanced electrostatic adsorption, surface coverage and multi-additive synergies, enabling tailored copper trace morphology. This study elaborates the adsorption mechanism and screening criteria of triphenylmethane-derived levelers and presents a candidate additive structure for high-speed copper electroplating.
Graphical Abstract
Keywords
redistribution layers, copper electroplating levelers, theoretical computations, in situ spectroelectrochemical analyses, microstructural characterization
DOI
10.61558/2993-074X.3591
Recommended Citation
Zihao Song, Weibin Wang, Xiaohui Liu, Xiaomin Han, Yi Zhou, Rui Huang, Yanxia Jiang, Zhe Li, Xiaowei Liu, Meiling Xiao, Hong-Gang Liao, Weilin Xu, Rong Sun. Triphenylmethane-Derived Levelers for High-Speed Redistribution Layer Copper Electroplating of Tailored Surface Morphologies[J]. Journal of Electrochemistry, doi: 10.61558/2993-074X.3591.
