Study On The Preparetion and Electrochemical Beavior of Nitrogen Doped Tetrahedral Amorphous Carbon Electrode

Authors

Ke LIU, 1),WANG Guang-fu~(2),WANG Zheng-hao~(*1)(1.Chemistry department,Beijing Normal University,Beijing 100875,China,2.Analytical and Jesting Center,Beijing Normal University,Beijing 100875,China;

Abstract

taC∶N films are a good materials for semiconductor electrodes.But further studies are hampered by the ohmic contact problem,which occurs between the silicon and the lead.By studying the influence of heat treatment on the film's property,it is believed that ohmic contact should be made on the silicon first,and then the film be deposited.A set of taC∶N electrodes with various nitrogen content have been prepared.CV study indicates that the cathodic limits move slowly to positive direction.while the anodic limits are unchanged with the increasing of nitrogen content.As a result,the electrochemical windows get narrow either.

Keywords

taC∶N electrodes, Ohmic contact, Cyclic voltammetry

DOI Link

https://doi.org/10.61558/2993-074X.1749

Publication Date

2006-08-28

Online Available Date

2006-08-28

Revised Date

2006-08-28

Received Date

2006-08-28

Recommended Citation

Ke LIU. Study On The Preparetion and Electrochemical Beavior of Nitrogen Doped Tetrahedral Amorphous Carbon Electrode[J]. Journal of Electrochemistry, 2006 , 12(3): 338-340.
DOI: 10.61558/2993-074X.1749
Available at: https://jelectrochem.xmu.edu.cn/journal/vol12/iss3/21

References

[1]Yoo K,M iller B,Kalish R,et al.E lectrodes of n itrogen-incorporated tetrahedral amorphous carbon[J].E lectro-chem.Solid-State Lett.,1999,2(5):233~235.
[2]Lee J J,M iller B,Sh i X,et al.A lum inum depositionand nuc leation on n itrogen-incorporated tetrahedral a-morphous carbon electrodes in amb ient temperaturechloroalum inate m elts[J].J.E lectrochem.Soc.,2000,147(9):3370~3376.
[3]Lee J J,M iller B,Sh i X,et al.E lectrodeposition andnuc leation of copper at n itrogen-incorporated tetrahedralamorphous carbon electrodes in basic amb ient tempera-ture chloroalum inate m etls[J].J.E lectrochem.Soc.,2001,148(3):C183~C190.
[4]“E lectron ic Industry M anufacture Techn ique M anual.”Comp ile Comm ittee.E lectron ic Industry M anufactureTechn ique M anual(7)Sem iconductor and Integrate C ir-cu it Volum e[M].Be ijing:National Defence IndustriyPress,1991:581~653.