Abstract
The chemical composition and structure of electroluminescent porous Si(PS) on n Si, prepared by photoelectrochemical etching method, were investigated by using XPS and LIMA. The results show that electroluminescence(EL) intensity depends on the formation potential of PS. The relation between EL property and the results of XPS and LIMA is also discussed.
Keywords
Porous silicon, XPS, LIMA, Electroluminescence
Publication Date
1996-05-28
Online Available Date
1996-05-28
Revised Date
1996-05-28
Received Date
1996-05-28
Recommended Citation
Guozheng Li, Chenqian Zhang.
Electroluminescent Property of n Type Porous Si and Its Characterization by XPS and LIMA[J]. Journal of Electrochemistry,
1996
,
2(2): Article 6.
DOI: 10.61558/2993-074X.3066
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol2/iss2/6
References
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