Effect of Preparation Conditions on Electroluminescence of Porous Silicon

Authors

Ya-jun YANG, ,LI Qing-shan,LIU Xian-yun,ZHANG Ning,ZHAO Bo,ZHENG Xue-gang,Shi Ming-ji,CHEN Da,WANG Jing-Jing(College of Physics and Engineering,Qufu Normal University,QuFu 273165,Shandong,China;

Abstract

Electrically induced visible light emitting porous silicon devices with the structure of ITO/PS/p-Si/Al were fabricated by evaporation-anodic oxidation method.The light emission last for a few hours under 7.5V forward bias conditions.It was shown that the electroluminescence(EL) peaks shifted to the blue with the increasing of current density,erosion time and solution concentration.In order to achieve samples with low driven voltage,long light emission time and high EL efficiency,porous silicon should be prepared under low current density and short erosion time.

Keywords

Porous silicon, Electroluminescence, Photoluminescence

DOI Link

https://doi.org/10.61558/2993-074X.1724

Publication Date

2006-05-28

Online Available Date

2006-05-28

Revised Date

2006-05-28

Received Date

2006-05-28

Recommended Citation

Ya-jun YANG. Effect of Preparation Conditions on Electroluminescence of Porous Silicon[J]. Journal of Electrochemistry, 2006 , 12(2): 210-213.
DOI: 10.61558/2993-074X.1724
Available at: https://jelectrochem.xmu.edu.cn/journal/vol12/iss2/16

References

[1]Canham L T.S ilicon quantum w ire array fabrication byelectrochem ical and chem ical d issolution of wafers[J].App l.Phys.Lett.,1990,57:1046~1048.
[2]Kosh ida N,Koyam a H.V isib le electrolum inescencefrom porous silicon[J].App l.Phys.Lett.,1992,60:347~349.
[3]Sh i H,Zheng Y,W ang Y,et al.E lectrically inducedlight em ission and novel photocurrent response of a por-ous silicon device[J].App l.Phys.Lett.,1993,63:770~772.
[4]Kuznetsov V A,Andrienko I,Hanem an D.H igh effi-c iency b lue-green electrolum inescence and scann ing tun-neling m icroscopy stud ies of porous silicon[J].App l.Phys.Lett.,1998,72:3323~3325.
[5]Tsuyosh i O,H idek i K,Tsuyosh i O,et al.M echan ismof the visib le electrolum inescence from m etal/porous sil-icon/n-S i devices[J].J.App l.Phys.,1997,81:1407~1412.
[6]Nobuyosh i K,H idek i K,Yuko Y.V isib le electrolum i-nescence from porous silicon d iodes w ith an electropoly-m erized contace[J].App l.Phys.Lett.,1993,83:2655~2657.
[7]Fereydoon N,M aruskaH P,Kalkhoran N M.V isib le e-lectrolum inescence from porous silicon np heterojunctiond iodes[J].App l.Phys.Lett.,1992,60:2514~2516.
[8]L innros J,Lalic N.H igh quantum effic iency for a por-ous silicon light em itting d iode under pu lsed operation[J].App l.Phys.Lett.,1995,66:3048~3050.
[9]N ish imura K,Nagao Y,Ikeda N.H igh external quan-tum effic iency of electrolum inescence from photoanod-ized porous silicon[J].J.App l.Phys.,1998,37:303~305.
[10]Ste inr P,Kozlowsk i F,LangW.L ight-em itting poroussilicon d iode w ith an increased electrolum inescencequantum effic iency[J].App l.Phys.Lett.,1993,62:2700~2702.
[11]Barillaro G,D iligentA,P ieri F.Integrated porous-sil-icon light-em itting d iodes:A fabrication process usinggraded dop ing profiles[J].App l.Phys.Lett.,2001,78:4154~4156.
[12]Zhang Z J(张占军),L i J J(李经建),Zhan B(张波).Further evidence for surface properties of poroussilicon resu lting in electrolum inescence[J].E lectro-chem istry(in Ch inese),2002,8(1):9~14.