Abstract
Electrically induced visible light emitting porous silicon devices with the structure of ITO/PS/p-Si/Al were fabricated by evaporation-anodic oxidation method.The light emission last for a few hours under 7.5V forward bias conditions.It was shown that the electroluminescence(EL) peaks shifted to the blue with the increasing of current density,erosion time and solution concentration.In order to achieve samples with low driven voltage,long light emission time and high EL efficiency,porous silicon should be prepared under low current density and short erosion time.
Keywords
Porous silicon, Electroluminescence, Photoluminescence
Publication Date
2006-05-28
Online Available Date
2006-05-28
Revised Date
2006-05-28
Received Date
2006-05-28
Recommended Citation
Ya-jun YANG.
Effect of Preparation Conditions on Electroluminescence of Porous Silicon[J]. Journal of Electrochemistry,
2006
,
12(2): 210-213.
DOI: 10.61558/2993-074X.1724
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol12/iss2/16
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