Study on Electrodeposition of InGaAs Thin Film

Authors

Yu chun LI, State Key Lab for Phys.Chem.of Solid Surface and Dept.of Chem., Xiamen Univ.,Xiamen 361005,China;
Xi lian WANG, Department of Electronic Science and Technology Harbin Institute of Technology, Heilongjiang, Harbin 150001, China;
Jing ke HAN, Department of Electronic Science and Technology Harbin Institute of Technology, Heilongjiang, Harbin 150001, China;
Ai-zhen HAN, Department of Electronic Science and Technology Harbin Institute of Technology, Heilongjiang, Harbin 150001, China;
Yuan-kai GAO, Department of Electronic Science and Technology Harbin Institute of Technology, Heilongjiang, Harbin 150001, China;
Zhi-wei YANG, Shandong Univers;

Corresponding Author

Ai zhen HAN

Abstract

The principle and the experimental method of the electrodeposition are discribed in detail in this paper.InGaAs thin film was prepared by using optimized electrodeposited conditions. The radiative wave length of the film was between 1.3～1.5 μm, the composition of the film was analyzed by energy spectrometer and the transmission spectrum of the film was measured by spectrophotometer and monochromator. The V I chractristic of the conductive type and the topography of the In x Ga 1 x As film were also studied.

Keywords

InGaAs thin film, Electrodeposition, Transmissivity

DOI Link

https://doi.org/10.61558/2993-074X.1407

Publication Date

2000-11-28

Online Available Date

2000-11-28

Revised Date

2000-11-28

Received Date

2000-11-28

Recommended Citation

Yu chun LI, Xi lian WANG, Jing ke HAN, Ai-zhen HAN, Yuan-kai GAO, Zhi-wei YANG. Study on Electrodeposition of InGaAs Thin Film[J]. Journal of Electrochemistry, 2000 , 6(4): 463-468.
DOI: 10.61558/2993-074X.1407
Available at: https://jelectrochem.xmu.edu.cn/journal/vol6/iss4/9

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