Galvanic Corrosion of TiN-W Electro-couple During Tungsten Chemical Mechanical Polishing

Authors

Xuan CHENG, Dept.of Chem., Xiamen Univ., Xiamen 361005, ChinaFollow
Chang-Jian LIN, Dept. of Materials Science & Engineering, State Key Laboratory for Physical Chemistry of Solid Surfaces, Xiamen Univ., Xiamen 361005, China

Corresponding Author

Xuan CHENG(xcheng@xmu.edu.cn)

Abstract

Chemical mechanical polishing (CMP) is a process whereby mechanicaland chemical forces are combined to remove material from a wafer and polish it to a flatsurface. Tungsten CMP is an important prcess to gain the global planarity of siliconwafers with tungsten (W) plugs. Tungsten is actually deposited on a thin adhesive layerof titanium nitride (TiN) on silicon. When close to the final stage of polishing, TiN and W will be simultaneously exposed to the polishing chemistry, forming a galvaniccouple. The corrsion of TiN and W couple will result in different polish rate.

Keywords

Chemical mechanical polishing, Galvanic corrosion, Global planarity

DOI Link

https://doi.org/10.61558/2993-074X.3250

Publication Date

2001-05-28

Online Available Date

2001-05-28

Revised Date

2001-05-20

Received Date

2001-01-12

Recommended Citation

Xuan CHENG, Chang-Jian LIN. Galvanic Corrosion of TiN-W Electro-couple During Tungsten Chemical Mechanical Polishing[J]. Journal of Electrochemistry, 2001 , 7(2): 189-194.
DOI: 10.61558/2993-074X.3250
Available at: https://jelectrochem.xmu.edu.cn/journal/vol7/iss2/12