Abstract
Influence of medium pH value and passivator concentrations on the copper passivation and CMP process were studied by electrochemical measurement technologies, relations of the film thickness and tightness with polishing process and polishing rates were investigated. Electrochemical variables influencing polishing process and rates were found out. Electochemical mechanism of polishing processes were explained by corrosion potential and corrosion current density. A recipe of K 3 as passivator and nano sized γ Al 2O 3 as abrasives in medium of NH 3·H 2O solution was confirmed reasonable. It is shown that the conditions of polishing process to be controlled are 10 psi and 300 r/min.
Keywords
Copper CMP, Electrochemical Behaviour
Publication Date
2001-11-28
Online Available Date
2001-11-28
Revised Date
2001-11-28
Received Date
2001-11-28
Recommended Citation
Yue hua HU, Han wei HE, UANG Ke nong H.
Study on Electrochemical Behavior of Copper in NH_3·H_2O Solution Medium Including K_3 during CMP[J]. Journal of Electrochemistry,
2001
,
7(4): Article 16.
DOI: 10.61558/2993-074X.3271
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol7/iss4/16
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