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Abstract

X-ray photoelectron spectrum and characteristics of the capacity,versus thevoltage of the thin film devices are measured to study the surface states of the zinc sulfide thin film.The transient electroluminescence excited by pulses shows the relaxation luminance peaks during anon-exponential decay process of the characteristic transitions activated by Er ̄(3+) in the ZnS directcurrent thin film electroluminescence (DCTFEL) devices.The surface structures of ZnS:Cu,Cl,Erfilm with the absorption of oxygen,and the effect of the surface states on the relaxation luminance ofthe devices are discussed.

Keywords

ZnS thin film, Absorption of oxygen, Relaxation luminance

Publication Date

1995-08-28

Online Available Date

1995-08-28

Revised Date

1995-08-28

Received Date

1995-08-28

References

1ZhouXiaopingetal.Investigationonhighefficientcatalystsfortheoxidativedehydrogenationofethane.ChemicalResearchinChineseUniversities,1993,9(3):2692BriggsD.X射线与紫外光电子能谱.北京:北京大学出版社,1984:3163马尔富宁AC.矿物的谱学、发光和辐射中心.北京:科学出版社,1984:1344柳兆洪,洪良基.硫化锌发光薄膜中铒发光中心.厦门大学学报(自然科学版),1991,30(1):335MortonDCetal.StudyoftheeffectsofagingontherelaxationluminanceinatomiclayerepitaxyZnS:Mnalternating-currentthin-filmelectroluminescentdevices.Appl.Phys.Lett.,1993,63(7):8636柳兆洪,王余姜.ZnS:Cu,Cl,Er直流电致发光薄膜激发机制的研究.厦门大学学报(自然科学版),1994,33(5):6147BorthouCetal.Mn ̄(2+)concentrationeffectontheopticalpropertiesofZn_2SiO_4:Mnphosphors.J.Electrochem.Soc.,1994,141(2):524

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