The Study of the Growth Processes of the Oxides on Lead Electrodes in Sulfuric Acid Solution

Authors

Hesheng Zhai, State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Xiamen University, Xiamen 361005
Xuguang Chen, State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Xiamen University, Xiamen 361005
Jinkua You, State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Xiamen University, Xiamen 361005
Yong Yang, State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Xiamen University, Xiamen 361005
Zugeng Lin, State Key Laboratory for Physical Chemistry of the Solid Surface, Department of Chemistry, Xiamen University, Xiamen 361005

Corresponding Author

Jinkua You

Abstract

The growth processes of PbO and PbO₂ on lead electrodes have been investigatedby using in-situ methods that are combined with temporary AC resistance measurment technique and in-situ laser scanning photoelectrochemical microscopy. It is found that a linear relationship existsbetween the electrode resistance(R) and^1/2 after the electrode is oxidized at +0.6 V(vs.Hg/H₂SO₄/35% H₂SO₄) for more than 5 min. This result suggests that the growth of PbO is well distributed during the early stage of oxidation. The study by using laser scanning photoelectrochemical microscopy has further proved this point. The results also show that the growth of PbO₂ takes place and develops.

Keywords

Lead electrode, Temporary AC resistance technique, Laser scanning

DOI Link

https://doi.org/10.61558/2993-074X.1265

Publication Date

1995-02-28

Online Available Date

1995-02-28

Revised Date

1995-02-20

Received Date

1994-09-11

Recommended Citation

Hesheng Zhai, Xuguang Chen, Jinkua You, Yong Yang, Zugeng Lin. The Study of the Growth Processes of the Oxides on Lead Electrodes in Sulfuric Acid Solution[J]. Journal of Electrochemistry, 1995 , 1(1): 65-69.
DOI: 10.61558/2993-074X.1265
Available at: https://jelectrochem.xmu.edu.cn/journal/vol1/iss1/10