A Study on the Interfacial Behaviours of GaAs/Al_xGa_1-xAs Quantum Well Electrode/Nonaqueous Electroyte

Authors

Yao Liu, Institute of Photographic Chemistry, Institute of Semiconductors
Xurui Xiao, Institute of Photographic Chemistry, Institute of Semiconductors
Yiping Zeng, Institute of Photographic Chemistry, Institute of Semiconductors
Diaozhao Sun, Institute of Photographic Chemistry, Institute of Semiconductors
Chunhui Yan, Institute of Photographic Chemistry, Institute of Semiconductors
Haiqun Zheng, Institute of Photographic Chemistry, Institute of Semiconductors

DOI Link

10.61558/2993-074X.3551

Publication Date

1995-05-28

Online Available Date

1995-05-28

Revised Date

1995-05-28

Received Date

1995-05-28

Recommended Citation

Yao Liu, Xurui Xiao, Yiping Zeng, Diaozhao Sun, Chunhui Yan, Haiqun Zheng. A Study on the Interfacial Behaviours of GaAs/Al_xGa_1-xAs Quantum Well Electrode/Nonaqueous Electroyte[J]. Journal of Electrochemistry, 1995 , 1(2): 140-140.
DOI: 10.61558/2993-074X.3551
Available at: https://jelectrochem.xmu.edu.cn/journal/vol1/iss2/17