A Study on the Interfacial Behaviours of GaAs/Al_xGa_1-xAs Quantum Well Electrode/Nonaqueous Electroyte

Authors

Yao Liu, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101
Xurui Xiao, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101
Yiping Zeng, Institute of Photographic Chemistry, Academia Sinica, Beijing 100101
Diaozhao Sun, Institute of Semiconductors, Academia Sinica, Beijing 100083
Chunhui Yan, Institute of Semiconductors, Academia Sinica, Beijing 100083
Haiqun Zheng, Institute of Semiconductors, Academia Sinica, Beijing 100083

Corresponding Author

Xurui Xiao

Abstract

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Keywords

Quantum well electrodes, Impedance spectra, Surface states

DOI Link

https://doi.org/10.61558/2993-074X.3551

Publication Date

1995-05-28

Online Available Date

1995-05-28

Revised Date

1995-01-16

Received Date

1994-11-18

Recommended Citation

Yao Liu, Xurui Xiao, Yiping Zeng, Diaozhao Sun, Chunhui Yan, Haiqun Zheng. A Study on the Interfacial Behaviours of GaAs/Al_xGa_1-xAs Quantum Well Electrode/Nonaqueous Electroyte[J]. Journal of Electrochemistry, 1995 , 1(2): 136-140.
DOI: 10.61558/2993-074X.3551
Available at: https://jelectrochem.xmu.edu.cn/journal/vol1/iss2/17