Growth Kinetics and Breakdown of Passive Films on REBAR Electrodes in Simulated Cement Pore Solution

Authors

Wei Chu, Dept.of Applied Chemistry,Nanjing University of Chemical Technology, Nanjing,210009)Yang Yong;Chen Xuguang;Lin Zugeng (State Key Laboratory for Physical Chemistry of the Solid Surface,Dept.of Chemistry,Xiamen University,;
Yuanxiang Shi, Dept.of Applied Chemistry,Nanjing University of Chemical Technology, Nanjing,210009)Yang Yong;Chen Xuguang;Lin Zugeng (State Key Laboratory for Physical Chemistry of the Solid Surface,Dept.of Chemistry,Xiamen University,;
Baoming Wei, Dept.of Applied Chemistry,Nanjing University of Chemical Technology, Nanjing,210009)Yang Yong;Chen Xuguang;Lin Zugeng (State Key Laboratory for Physical Chemistry of the Solid Surface,Dept.of Chemistry,Xiamen University,;

Abstract

The growth kinetics and breakdown of passive films on REBAR electrodes insimulated cement solution(pH=12.5 and 13.8)have been investigated using in situphotoelectrochemical methods and potential step method. The results show that there are two mainstages in the growth of the film ,with two rate functions characterized by linear relation between thefilm thickness and the direct logarithm of time. There is a sign in laser-scanning photoelectrochemicalmicroscopic image just before the passive film breaks down. The addition of inhibitor NaNO_2changesthe growth kinetics and thickness of the film ,and therefore improves the resistance of pitting corrosioninduced by chloride.

Keywords

passive films on REBAR, Simulated cement pore solution, Laser scanningphotoelectrochemical microscopy

DOI Link

https://doi.org/10.61558/2993-074X.1313

Publication Date

1995-11-28

Online Available Date

1995-11-28

Revised Date

1995-11-28

Received Date

1995-11-28

Recommended Citation

Wei Chu, Yuanxiang Shi, Baoming Wei. Growth Kinetics and Breakdown of Passive Films on REBAR Electrodes in Simulated Cement Pore Solution[J]. Journal of Electrochemistry, 1995 , 1(4): 415-421.
DOI: 10.61558/2993-074X.1313
Available at: https://jelectrochem.xmu.edu.cn/journal/vol1/iss4/6