Initial Process of Pyrophosphate Copper Electroplating

Authors

Shao-bin FENG, College of Materials Science and Chemical Engineering, Zhengzhou Institute of Light Industry, Zhengzhou 450002, China;
Shi-bo SHANG, College of Materials Science and Chemical Engineering, Zhengzhou Institute of Light Industry, Zhengzhou 450002, China;
Li-ting FENG, College of Materials Science and Chemical Engineering, Zhengzhou Institute of Light Industry, Zhengzhou 450002, China;

Corresponding Author

Shao-bin FENG

Abstract

The relationship between the type of on changes of copper electroplating potential~time and the adhesion of coating layer was examined by chronopotentiometry. The conception of critical initial current density (D_(KC)) was put forward. When the initial working current (D_(KI)) was higher than the critical initial current, the iron electrodewas polarized to activation potential of iron surface firstly, then to the activation of the substratesurface, and finally to depositionpotentialof copper ion. The coating deposited on the active surface and had goodadhesion.On the contrary,when D_(KI) was lower than D_(KC), the coating deposits on the surface of "passivated" iron substrate, and bad coating was only gained. The combinationof Ar ion sputtering and X radial photoelectron spectra may measure the existence ofoxygen layerbetween copper coating and iron substrate. Through adjusting technical condition, the optimal process of pyrophosphatedirection copper plating was given.

Keywords

Pyrophosphate copper plating, Critical initial current density, Adhesion, X radial photoelectron spectra, Depth etching

DOI Link

https://doi.org/10.61558/2993-074X.1646

Publication Date

2005-05-28

Online Available Date

2005-05-28

Revised Date

2005-05-28

Received Date

2005-05-28

Recommended Citation

Shao-bin FENG, Shi-bo SHANG, Li-ting FENG. Initial Process of Pyrophosphate Copper Electroplating[J]. Journal of Electrochemistry, 2005 , 11(2): 228-231.
DOI: 10.61558/2993-074X.1646
Available at: https://jelectrochem.xmu.edu.cn/journal/vol11/iss2/22

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