Abstract
A two-dimensional photonic band structure based on macroporous silicon with a gap centered at 20μm has been achieved for the first time.A medium doped p-type(100) silicon substrate was patterned by the standard photolithograpgy and alkaline efthing.And this pre-patterned sample was then etched 90 μm deep by electrochemical pore formation in the mixture of hydrofluoric-acid and dimethylformamide(DMF) to produce a quare lattice of circular air rods with a lattice constant of 3.8 μm and the very high aspect ratio up to 30.The optimized electrochemical parameters such as eletrolytical components and the current density were 5 % HF(by mass)+7 % H_(2)O(by mass)+DMF and 12 mA/cm~(2) respectively.the pore formation technique should allow the fabrication of photonic lattices with a complete two-dimensional photonic band gap in the middle and near infrared.
Keywords
Macroporous silicon, Photonic crystals, Fabrication, Electrochemical-etch
Publication Date
2005-11-28
Online Available Date
2005-11-28
Revised Date
2005-11-28
Received Date
2005-11-28
Recommended Citation
Wan-yun ZHANG, Jia-rong JI, Xiao-dong YUAN, Wei-min YE, Zhi-hong ZHU.
Optimized Parameters for Electrochemical Fabrication of P-type Silicon-Based Two-dimensional Photonic Crystals[J]. Journal of Electrochemistry,
2005
,
11(4): 377-381.
DOI: 10.61558/2993-074X.1671
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol11/iss4/4
