Abstract
In this paper,research progresses in electroless plating for damascene copper process were reviewed.Electroless nickel ternary alloy deposition for barrier layer and electroless copper plating for seed layer were presented.Bottom-up copper fill high-aspect-via-hole and electroless plating after ICB-Pd catalytic layer for seed layer were mainly introduced.The applications of electroless plating in ultralarge-scale integration were discussed,and the developing tendency was also suggested.
Keywords
Electroless copper plating, Bottom-up fill, Damascene copper interconnection, Seed layer, Barrier layer
Publication Date
2006-05-28
Online Available Date
2006-05-28
Revised Date
2006-05-28
Received Date
2006-05-28
Recommended Citation
Zeng-lin WANG.
Application of Electrolessplating Technology in Interconnection Manufacturing of Ultralarge-scale Integration[J]. Journal of Electrochemistry,
2006
,
12(2): 125-133.
DOI: 10.61558/2993-074X.1710
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol12/iss2/2
Included in
Materials Chemistry Commons, Physical Chemistry Commons, Semiconductor and Optical Materials Commons