Electrochemical Behavor of Zinc-Indium Alloy Electrodes in Concentrated Alkaline Solution

Authors

Zhi-lin WANG, State Key Laboratory of Physical Chemistry of Solid Surfaces,Department of Chemistry,Xiamen University,Xiamen 361005,Fujian,China,;
Xiao-ge ZHANG, Teck Cominco Metals Ltd,Canada;
Rong-gui DU, State Key Laboratory of Physical Chemistry of Solid Surfaces,Department of Chemistry,Xiamen University,Xiamen 361005,Fujian,China,;
Chang-jian LIN, State Key Laboratory of Physical Chemistry of Solid Surfaces,Department of Chemistry,Xiamen University,Xiamen 361005,Fujian,China,;

Corresponding Author

Chang-jian LIN(cjlin@xmu.edu.cn)

Abstract

The electrochemical behavior of zinc-indium alloy electrodes in 35%KOH solutions has been investigated by electrochemical methods including the potentiodynamic polarization and discharge measurements under constant current density.The results indicate that the anodic current density and passive current density increase after the indium addition.The discharge measurement shows that the addition of indium shortens the time to passive state for the Zn alloy compared to pure zinc at a large discharge conditions,that is the addition of indium may enhance the electrochemical activity of Zn alloy electrodes.It is found that the anodic dissolution of zinc-indium alloy electrodes in the concentrated KOH solution occurs along the certain crystalline face,and the surface roughness increases with the increasing of indium addition due to the anodic dissolution.

Keywords

zinc electrode, zinc-indium alloys, anodic activity, passivation

DOI Link

https://doi.org/10.61558/2993-074X.1843

Publication Date

2007-11-28

Online Available Date

2007-11-28

Revised Date

2007-11-28

Received Date

2007-11-28

Recommended Citation

Zhi-lin WANG, Xiao-ge ZHANG, Rong-gui DU, Chang-jian LIN. Electrochemical Behavor of Zinc-Indium Alloy Electrodes in Concentrated Alkaline Solution[J]. Journal of Electrochemistry, 2007 , 13(4): 407-410.
DOI: 10.61558/2993-074X.1843
Available at: https://jelectrochem.xmu.edu.cn/journal/vol13/iss4/10