Abstract
The texturization of(100) crystalline silicon(c-Si) wafer was studied by field-emission scanning electron microscope using different kinds of etchant: sodium hydroxide,sodium carbonate and tribasic sodium phosphate.By optimizing the etching parameters,the lowest values of averaged reflectance(Rav) were obtained to be 9.70% for NaOH,9.76% for Na2CO3 and 8.63% for Na3PO4·12H2O,which is comparable to that of the wafer with textured surface covered with an anti-reflection coating of either silicon nitride or thermally grown silicon dioxide.The relation of Rav and surface morphology of textured wafer was analyzed.Moreover,special emphasis was put on the role of isopropyl alcohol(IPA) and sodium bicarbonate for texturization.It is proved that IPA decreased the etching rate but improved the morphology of the textured surface.It seems that played NaHCO3 played the similar role of IPA but resulted in the formation of large pyramid.The mechanism of texturization by different kinds of etchant was suggested.
Keywords
crystalline silicon, texturization, alkaline, reflectance, surface morphology
Publication Date
2008-11-28
Online Available Date
2008-11-28
Revised Date
2008-11-28
Received Date
2008-11-28
Recommended Citation
Yu-hua DOU, Yu-qin ZHOU, Mei-fang ZHU, Shuang SONG, Feng-zhen LIU, Jin-long LIU, Zhan-jun ZHANG.
Study on the Texturization of c-Si Wafers by Different Kinds of Alkaline for Heterojunction Solar Cells[J]. Journal of Electrochemistry,
2008
,
14(4): 358-364.
DOI: 10.61558/2993-074X.1921
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol14/iss4/2
Included in
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