In Situ Studies of Copper Electrodepostion on HOPG by Using ECSTM

Authors

Zhaoxiong Xie, Beijing Research Institute of Materials & Technology, Beijing 100076;
Bingwei Mao, State Key Laboratory for Physical Chemistry of the Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen 361005;
Xiangdong Zhuo, State Key Laboratory for Physical Chemistry of the Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen 361005;
Jiqian Mu, State Key Laboratory for Physical Chemistry of the Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen 361005;
Zhaowu Tian, State Key Laboratory for Physical Chemistry of the Solid Surfaces, Department of Chemistry, Xiamen University, Xiamen 361005;

Abstract

In this paper, copper electrodepostion on HOPG had been in situ studied by using a homebuilt electrochemical scanning tunneling microscopy (ECSTM). Three dimensional nucleation and subsequent growth of copper crystals were found as the initial stage of copper deposition on HOPG. In the case of lower overpotential or lower concentration of Cu 2+ , the bulk deposited copper layer tended to form smooth terraces, and grow at the edge of steps. The terraces were stable to some extent, which made it possible to be observed with atomic resolution. At a higher overpotential, the crystal size of copper were somehow smaller. By comparing with ex situ STM images, it was found that the deposition rate under the STM tip area was much lower, which might due to the shielding of the STM tip.

Keywords

ECSTM, STM, Electrodeposition, Copper deposits

DOI Link

https://doi.org/10.61558/2993-074X.3069

Publication Date

1996-05-28

Online Available Date

1996-05-28

Revised Date

1996-05-28

Received Date

1996-05-28

Recommended Citation

Zhaoxiong Xie, Bingwei Mao, Xiangdong Zhuo, Jiqian Mu, Zhaowu Tian. In Situ Studies of Copper Electrodepostion on HOPG by Using ECSTM[J]. Journal of Electrochemistry, 1996 , 2(2): Article 9.
DOI: 10.61558/2993-074X.3069
Available at: https://jelectrochem.xmu.edu.cn/journal/vol2/iss2/9

References

1Batina，N，WilT，KolbDM．Studyoftheinitialstagesofcopperdepositionbyinsituscanningtunnel－ingmicroscopy．FaradayDiscussion，1992，94：932VazquezL，CreusAH，CarroP，OconP，HerrastiP，PalacioC，VaraJM，SalvarezzaRC，ArviaAJ．Scanningtunnelingmicroscopyandscanningelectronmicroscopyobservationsoftheearlystageofsilverdepositionongraphitesinglecrystalelectrodes．J．Phys．Chem．，1992，96：104543AindowM，FarrJPG．Theuseofelectrochemicalscanningtunnelingmicroscopytostudytheinitialstagesofelectrodepositioninsitu；OverpotentialdepositionofPbandPtonHOPG．Tran．Inst．MetalFinish．，1992，70：1714李春增，谢兆雄，毛秉伟，卓向东，穆纪千，叶建辉，冯祖德，田昭武．Cu在HOPG上电化学沉积的原子分辨ECSTM现场观察．高等学校化学学报，1993，14：7065TianZW，ZhuoXD，MuJQ，YeJH，FenZD，MaoBW．Anewelectrochemicalscanningtunnelingmicroscope．Ultramicroscopy，1992，42－44：4606XieZX，RenB，LiCZ，TianZQ．AnewmethodofSTMtipcoatingforelectrochemicalstudies．TheFirstAsianWorkshoponSTM．，1993（Japan）