Abstract
The synthesis of GaSb thin films has been successfully performed by a method involving one-step potentiostatic electrodeposition and thermal annealing. The effect of ethylene glycol as a solvent in aqueous electrolyte solution on the crystallinity and morphology of the prepared thin films was discussed. The electrodeposition mechanisms of GaSb were studied by cyclic voltammetry, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to analyze structure, morphology and composition of the thin films. The results show that SbO+ is first reduced to Sb, and Ga3+ is deposited via the induced co-deposition mechanism. The deposition potential has great effect on the crystallinity, morphology and composition of the GaSb thin films. Ethylene glycol in the aqueous electrolyte solution is beneficial to deposit GaSb directly at more positive potential, and effective to improve the crystallinity and microstructure of the thin films.
Graphical Abstract
Keywords
GaSb thin films, electrochemical codeposition, ethylene glycol
Publication Date
2014-04-28
Online Available Date
2014-04-17
Revised Date
2013-05-10
Received Date
2013-03-24
Recommended Citation
Yu-lin XIONG, Yuan-chun PAN, Bai-sheng SA, Jian ZHOU, Zhi-mei SUN.
Electrochemical Deposition of GaSb Thin Films for Phase Change Memory in Aqueous Solutions[J]. Journal of Electrochemistry,
2014
,
20(2): 130322.
DOI: 10.13208/j.electrochem.130322
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol20/iss2/16
