Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration

Authors

Xiao-wei DU, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;
Ji CHENG, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;University of Chinese Academy of Sciences, Beijing 100049, China;
Hui GUO, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
Qing-hui JIN, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;Follow
Jian-long ZHAO, State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;

Corresponding Author

Qing-hui JIN(jinqh@mail.sim.ac.cn)

Abstract

High-sensitivity and low-noise solution-gated graphene field effect transistors (SGFETs) were fabricated using chemical vapor deposition (CVD) graphene as a channel material, and their response characteristics to concentration and pH of phosphate buffered saline (PBS) were measured. The minimum conductance point shifted to left with increasing concentration, and the offset showed a linear relationship with the natural logarithm of concentration. While, the minimum conductance point shifted to right with increasing pH, and the offset showed a linear relationship with pH. The research on these response characteristics may give proper guidance to SGFETs’s application.

Graphical Abstract

Keywords

chemical vapor deposition graphene, solution-gated graphene field effect transistor, buffer solution concentration and pH

DOI Link

https://doi.org/10.13208/j.electrochem.140912

Publication Date

2015-04-28

Online Available Date

2015-04-23

Revised Date

2014-10-30

Received Date

2014-09-12

Recommended Citation

Xiao-wei DU, Ji CHENG, Hui GUO, Qing-hui JIN, Jian-long ZHAO. Response Characteristics of Solution-Gated Graphene Field Effect Transistors to Buffer Solution pH and Concentration[J]. Journal of Electrochemistry, 2015 , 21(2): 167-171.
DOI: 10.13208/j.electrochem.140912
Available at: https://jelectrochem.xmu.edu.cn/journal/vol21/iss2/10

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