Corresponding Author

Qing-hui JIN(jinqh@mail.sim.ac.cn)


High-sensitivity and low-noise solution-gated graphene field effect transistors (SGFETs) were fabricated using chemical vapor deposition (CVD) graphene as a channel material, and their response characteristics to concentration and pH of phosphate buffered saline (PBS) were measured. The minimum conductance point shifted to left with increasing concentration, and the offset showed a linear relationship with the natural logarithm of concentration. While, the minimum conductance point shifted to right with increasing pH, and the offset showed a linear relationship with pH. The research on these response characteristics may give proper guidance to SGFETs’s application.

Graphical Abstract


chemical vapor deposition graphene, solution-gated graphene field effect transistor, buffer solution concentration and pH

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