Authors
Lei JIN , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China;
Jia-qiang YANG , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China;
Fang-zu YANG , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China; Follow
Dong-ping ZHAN , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China; Follow
Zhong-qun TIAN , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China;
Shao-min ZHOU , College of Chemistry and Chemical Engineering, State Key Laboratory of Physical Chemistry of Solid Surfaces, Xiamen University, Xiamen 361005, Fujian, China;
Corresponding Author
Fang-zu YANG(fzyang@xmu.edu.cn); Dong-ping ZHAN(dpzhan@xmu.edu.cn)
Abstract
In this paper, the copper interconnection technology in chip manufacturing is introduced in detail, and the essentials of acidic copper sulfate electroplating process and the mechanisms of common-used additives are reviewed. The progresses of novel additives at home and abroad are also summarized. Based on the studied achievement, the possibility of the novel copper interconnect process replacing the acidic copper electroplating is prospected.
Graphical Abstract
Keywords
chips, copper interconnection, acidic copper sulfate electroplating, additives
Publication Date
2020-08-28
Online Available Date
2020-03-10
Recommended Citation
Lei JIN, Jia-qiang YANG, Fang-zu YANG, Dong-ping ZHAN, Zhong-qun TIAN, Shao-min ZHOU.
Research Progresses of Copper Interconnection in Chips[J]. Journal of Electrochemistry ,
2020
,
26(4): 521-530.
DOI: 10.13208/j.electrochem.200212
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol26/iss4/11
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