Improved Etching Resolution on Silicon by the Confined Etchant Layer Technique

Authors

• Yanbing Zu, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Lei Xie, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Bingwei Mao, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Jiqian Mu, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Zhaoxiong Xie, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Zhaowu Tian, State Key Lab. for Phys. Chem. of the Solid Surf., Dept. of Chem., Xiamen Univ., Xiamen 361005
• Lining Sun, Robost Inst., Univ. of Tech. of Harbin, Harbin 150001

Corresponding Author

Zhaowu Tian

Keywords

Confined etchant layer technique (CELT), Silicon, High resolution etching

DOI Link

https://doi.org/10.61558/2993-074X.3554

Publication Date

1997-02-28

Online Available Date

1997-02-28

Revised Date

1997-02-20

Received Date

1996-12-15

Recommended Citation

Yanbing Zu, Lei Xie, Bingwei Mao, Jiqian Mu, Zhaoxiong Xie, Zhaowu Tian, Lining Sun. Improved Etching Resolution on Silicon by the Confined Etchant Layer Technique[J]. Journal of Electrochemistry, 1997, 3(1): 11-14.
DOI: 10.61558/2993-074X.3554
Available at: https://jelectrochem.xmu.edu.cn/journal/vol3/iss1/18