Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces

Authors

ZhaoXiong Cai XiongWei Xie
CaiHui Shi
BingWei Mao
ZhaoWu Tian

Abstract

H terminated n Si(111) surface was found to be etched in 0.5% HF solution in nanometer scale while scanning the STM tip when the substrate potential was somehow lower than the open circuit potential at tunneling condition of V b=+1.0 V (tip positive), I t=1 nA. Much more stable Si surface was achievable at potentials much more negative than the open circuit potential (such as 500 mV negative to OCP) under the same tunneling condition. Furthermore, the etching rete at less negative potential was found to be somehow related to the tunneling current. These results indicate that the STM induced local modification of Si(111) surface is electrochemically controllable. A proposed model of the hole injection through the tunneling current is put forward to account for the induced etching of Si surface.

DOI Link

https://doi.org/10.61558/2993-074X.2653

Publication Date

1997-05-28

Online Available Date

1997-05-28

Revised Date

1997-05-28

Received Date

1997-05-28

Recommended Citation

ZhaoXiong Cai XiongWei Xie, CaiHui Shi, BingWei Mao, ZhaoWu Tian. Effects of Tunneling Electrons and Local Field on Nanometer Region Solid / Liquid Interfacial Reactions ——Potential Controlled STM Induced Nanoscale Modification of H terminated Si(111) Surfaces[J]. Journal of Electrochemistry, 1997 , 3(2): Article 1.
DOI: 10.61558/2993-074X.2653
Available at: https://jelectrochem.xmu.edu.cn/journal/vol3/iss2/1

References

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