Abstract
Porous silicon with micrometer size pores, which is made on n + Si by photoelectrochemically etched, has electroluminescent property. Each monochromic intensity and wavelength range of luminescent spectra depend on polarized potential. The intersity and the stability of cathodic electroluminescence is high than those of anodic one. Voltammetric behavior before quenching indicated that the electrochemical reactions of some surface species are involved in except the reduction of S 2O 2- 8, which leads to radiative recombination. The energy band diagram based on n + Si (E g=1.1 eV)/PS(E g=1.8 eV) junction is proposed.
Keywords
n + Si, Etching, Porous Silicon, Electroluminescence, Quenching
Publication Date
1997-05-28
Online Available Date
1997-05-28
Revised Date
1997-05-28
Received Date
1997-05-28
Recommended Citation
Guozheng Li, Chengqian Zhang, Xiumei Yang.
Electroluminescence of Photoelectrochemically Etched n + Si[J]. Journal of Electrochemistry,
1997
,
3(2): Article 9.
DOI: 10.61558/2993-074X.3112
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol3/iss2/9
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