Abstract
PS layer on n+Si with (111) orientation prepered by means of photoelectrochemically etched has photoluminescent (PL) ability like PS layer on usual nSi. The data of PL spectra and quenching are given.
Publication Date
1997-11-28
Online Available Date
1997-11-28
Revised Date
1997-11-28
Received Date
1997-11-28
Recommended Citation
Guozheng Li, Chengqian Zhang, Xiumei Yang.
Photoluminescence of Photoelectrochemically Etched n+-Si[J]. Journal of Electrochemistry,
1997
,
3(4): Article 17.
DOI: 10.61558/2993-074X.2669
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol3/iss4/17
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