Photoluminescence of Photoelectrochemically Etched n⁺-Si

Authors

Guozheng Li, Dept of Chem., Shandong Univ.,Jinan 250100
Chengqian Zhang, Dept of Chem., Shandong Univ.,Jinan 250100
Xiumei Yang, Dept of Chem., Shandong Univ.,Jinan 250100

Corresponding Author

Guozheng Li

Abstract

PS layer on n⁺-Si with (111) orientation prepered by means of photoelectrochemically etched has photo-luminescent (PL) ability like PS layer on usual n-Si. The data of PL spectra and quenching are given.

Keywords

n+-Si, Etching, Porous silicon, Photolum inescence

DOI Link

https://doi.org/10.61558/2993-074X.2669

Publication Date

1997-11-28

Online Available Date

1997-11-28

Revised Date

1997-07-21

Received Date

1997-05-03

Recommended Citation

Guozheng Li, Chengqian Zhang, Xiumei Yang. Photoluminescence of Photoelectrochemically Etched n⁺-Si[J]. Journal of Electrochemistry, 1997 , 3(4): 443-446.
DOI: 10.61558/2993-074X.2669
Available at: https://jelectrochem.xmu.edu.cn/journal/vol3/iss4/17