Lian-Huan Han (hanlianhuan@xmu.edu.cn); Yun-Hua Liu (liuyh@mail.hust.edu.cn); Dong-Ping Zhan (dpzhan@xmu.edu.cn)
Abstract
As a promising 2D material, graphene exhibits excellent physical properties including single-atom-scale thickness and remarkably high charge carrier mobility. However, its semi-metallic nature with a zero bandgap poses challenges for its application in high-performance field-effect transistors (FETs). In order to overcome these limitations, various approaches have been explored to modulate graphene's bandgap, including nanoscale confinement, external field induction, doping, and chemical micropatterning. Nevertheless, the stability and controllability still need to be improved. In this study, we propose a feasible method that combines electrochemical bromination and photolithography to precisely tune the electron transport properties of single layer graphene (SLG). Through this method, we successfully fabricated various brominated SLG (SLGBr) micropatterns with high accuracy. Futher investigation revealed that the electron transport properties of SLG can be conveniently tuned by controlling the degree of bromination. The SLGBr exhibited a resistance, and have a decreasing conductance with the bromination degree increasing. When the bromination degree increased to a critical value, the SLGBr demonstrated semiconducting characteristics. This research offers a prospective route for the fabrication of graphene-based devices, providing potential applications in the realm of microelectronics.
Graphical Abstract
Keywords
Graphene patterning; Electron transport; Electrochemical bromination; Photolithography; All graphene device
