Abstract
400 nm aluminum films were deposited onto a p-type, 0.5 Ω·cm,〈100〉oriented silicon wafers using electron beam evaporation technique. Then, the wafers was immersed in 15 wt% H2SO4 for porous-type over-anodization under a constant voltage of DC 60V. During the anodization,the temperature of the electrolyte was maintained at 0 ℃. The obtained samples were investigated by means of transmission electron microscopy, scanning electron microscopy, and AES depth profile for multi-layer structural information. In addition, the basic anodic formation mechanism of the Si-based aluminum films was brielfly discussed.
Keywords
Anodic oxidation, Si-based porous alumina, AES, Multi-layer structure
Publication Date
1999-11-28
Online Available Date
1999-11-28
Revised Date
1999-05-10
Received Date
1998-11-30
Recommended Citation
Jun-hui WU, Jian-ping ZOU, Qing ZHU, Xi-mao BAO.
AES Multi-layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism[J]. Journal of Electrochemistry,
1999
,
5(4): 389-394.
DOI: 10.61558/2993-074X.1366
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol5/iss4/3
