Abstract
nm aluminum films were deposited onto a p_type,0.5 Ω·cm, 〈100〉 oriented silicon wafers using electron beam evaporation technique.Then,the wafers was immersed in 15 wt% H 2SO 4 for porous_type over_anodization under a constant voltage of DC 60V.During the anodization,the temperature of the electrolyte was maintained at 0 ℃.The obtained samples were investigated by means of transmission electron microscopy,scanning electron microscopy,and AES depth profile for multi_layer structural information.In addition, the basic anodic formation mechanism of the Si_based aluminum films was brielfly discussed.
Keywords
Anodic oxidation, Si_based porous alumina, AES, Multi_layer structure
Publication Date
1999-11-28
Online Available Date
1999-11-28
Revised Date
1999-11-28
Received Date
1999-11-28
Recommended Citation
Junhui Wu, Jianping Zou, Qing Zhu, Ximao Bao.
AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism[J]. Journal of Electrochemistry,
1999
,
5(4): 389-394.
DOI: 10.61558/2993-074X.1366
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol5/iss4/3
References
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