AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism

Authors

Junhui Wu, School of Materials and Metallurgy,Northeastern Univ.,Shenyang 110006;
Jianping Zou, National Laboratory of Solid State Microstructures and Dept of Phys., Nanjing Univ.,Nanjing 210093;
Qing Zhu, National Laboratory of Solid State Microstructures and Dept of Phys., Nanjing Univ.,Nanjing 210093;
Ximao Bao, National Laboratory of Solid State Microstructures and Dept of Phys., Nanjing Univ.,Nanjing 210093;

Corresponding Author

Junhui Wu

Abstract

nm aluminum films were deposited onto a p_type,0.5 Ω·cm, 〈100〉 oriented silicon wafers using electron beam evaporation technique.Then,the wafers was immersed in 15 wt% H 2SO 4 for porous_type over_anodization under a constant voltage of DC 60V.During the anodization,the temperature of the electrolyte was maintained at 0 ℃.The obtained samples were investigated by means of transmission electron microscopy,scanning electron microscopy,and AES depth profile for multi_layer structural information.In addition, the basic anodic formation mechanism of the Si_based aluminum films was brielfly discussed.

Keywords

Anodic oxidation, Si_based porous alumina, AES, Multi_layer structure

DOI Link

https://doi.org/10.61558/2993-074X.1366

Publication Date

1999-11-28

Online Available Date

1999-11-28

Revised Date

1999-11-28

Received Date

1999-11-28

Recommended Citation

Junhui Wu, Jianping Zou, Qing Zhu, Ximao Bao. AES Multi_layer Structural Analysis of Si based Anodic Porous Alumina Films and Studies on Its Formation Mechanism[J]. Journal of Electrochemistry, 1999 , 5(4): 389-394.
DOI: 10.61558/2993-074X.1366
Available at: https://jelectrochem.xmu.edu.cn/journal/vol5/iss4/3