Abstract
Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro_gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H 3AsO 3 was not added in the etching solution, the regular micro_gear patterns of the mold could not be obtained. In addition ,the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed.
Keywords
Confined etchant layer technique, Scavenger, GaAs, Microfabrication
Publication Date
2000-08-28
Online Available Date
2000-08-28
Revised Date
2000-08-28
Received Date
2000-08-28
Recommended Citation
Hai-gou HUANG, Jian-jun SUN, Xiong-ying YE, Li-min JIANG, Jin LUO, Ze-sheng LU, Shen DONG, Zhong-qun TIAN, Zhao_ying ZHOU, Zhao_wu TIAN.
Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold[J]. Journal of Electrochemistry,
2000
,
6(3): 253-257.
DOI: 10.61558/2993-074X.1386
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol6/iss3/1
References
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