Authors
Hai-gou HUANG , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ., Xiamen 361005, China
Jian-jun SUN , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ., Xiamen 361005, China
Xiong-ying YE , Dept.of Precision Instruments, Tsinghua Univ., BeiJing 100084, China
Li-min JIANG , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ., Xiamen 361005, China
Jin LUO , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ., Xiamen 361005, China
Ze-sheng LU , Precision Engin. Res. Inst., Harbin Inst. of Techn., Harbin 150001, China
Shen DONG , Precision Engin. Res. Inst., Harbin Inst. of Techn., Harbin 150001, China
Zhong-qun TIAN , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ, Xiamen 361005, China
Zhao-ying ZHOU , Dept.of Precision Instruments, Tsinghua Univ., BeiJing 100084, China
Zhao-wu TIAN , State Key Lab for Phys.Chem.of the Solid Surf., Dept.of Chem., Xiamen Univ, Xiamen 361005, China
Corresponding Author
Zhao-ying ZHOU; Zhao-wu TIAN
Abstract
Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro-gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H3 AsO3 was not added in the etching solution, the regular micro-gear patterns of the mold could not be obtained. In addition, the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed.
Keywords
Confined etchant layer technique, Scavenger, GaAs, Microfabrication
Publication Date
2000-08-28
Online Available Date
2000-08-28
Recommended Citation
Hai-gou HUANG, Jian-jun SUN, Xiong-ying YE, Li-min JIANG, Jin LUO, Ze-sheng LU, Shen DONG, Zhong-qun TIAN, Zhao-ying ZHOU, Zhao-wu TIAN.
Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold[J]. Journal of Electrochemistry ,
2000
,
6(3): 253-257.
DOI: 10.61558/2993-074X.1386
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol6/iss3/1
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