Electrochemical Investigations of Semiconductor Silicon Wafers

Authors

Xuan CHENG, State Key Lab for Phys. Chem. of Solid surface and Dept. of Chem., Xiamen Univ., Xiamen 361005, China;
Chang jian LIN, Dept. of Chem., ** Dept. of Materials Sci., State Key Lab. for Phys. Chem. of Solid Surf., Xiamen Univ., Xiamen 361005, China;

Corresponding Author

Xuan CHENG(xcheng@xmu.edu.cn);
Chang jian LIN

Abstract

Electrochemical characteristics of semiconductor silicon wafers were investigated in dilute hydrofluoric acid solutions using DC polarization and AC impedance techniques under both illuminated and dark conditions. Both techniques were extremely sensitive to the trace amount (10 -9 wt% level) of copper presented in solutions, but only sensitive to the 10 -6 wt% level of non ionic surfactant OHS contained in solutions. The results revealed that the electrochemical reactions took place favorably and became predominated at silicon/solution interface under illuminated condition.

Keywords

Polarization Resistance, Copper contamination, Silicon/solution interface

DOI Link

https://doi.org/10.61558/2993-074X.1387

Publication Date

2000-08-28

Online Available Date

2000-08-28

Revised Date

2000-08-28

Received Date

2000-08-28

Recommended Citation

Xuan CHENG, Chang jian LIN. Electrochemical Investigations of Semiconductor Silicon Wafers[J]. Journal of Electrochemistry, 2000 , 6(3): 258-264.
DOI: 10.61558/2993-074X.1387
Available at: https://jelectrochem.xmu.edu.cn/journal/vol6/iss3/2

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