Abstract
Porous silicon structures were formed by two?step technique consisting of pulse current applications in 1∶1 hydrofluoric acid and ethanol solutions and chemical oxidation in 20% nitric acid solutions. Their surface morphologies and optical properties were characterized by scanning electron microscope (SEM) and Raman spectrometer, and compared with those obtained by constant current application. More uniform pore formation on p(100) silicon wafers was observed by pulse current application. Illumination with an ultraviolet lamp during the pulse current application accelerated the macropore formation, accordingly, the optical properties were changed.
Publication Date
2001-02-28
Online Available Date
2001-02-28
Revised Date
2001-02-28
Received Date
2001-02-28
Recommended Citation
Xuan CHENG, Feng ming LIU, Zuo xin WEN, Chang jian LIN, Zhong-qun TIAN, Ru XUE.
Fabrications and Characterizations of Porous Silicon by Two-step Techniques II: Pulse Current Application[J]. Journal of Electrochemistry,
2001
,
7(1): Article 22.
DOI: 10.61558/2993-074X.3242
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol7/iss1/22
References
[1] ChengX ,LiuFM ,WenZXetal.Fabricationsandcharacterizationsofporoussiliconbytwo -steptech niques ,I:ConstantCurrentApplication[J].Electrochemistry(inChinese) ,2 0 0 1,6 (4 ) ,399~ 4 0 5.
[2 ] BrandtMS ,FuchsHD ,StutzmannM ,etal.Theoriginofvisibleluminescencefrom‘poroussilicon’ :Anewinterpretation[J].SolidStateCommun .1992 ,81(4 ) ,30 7~ 312 .