Corresponding Author

Xuan CHENG(xcheng@xmu.edu.cn)


Porous silicon structures were formed by two?step technique consisting of pulse current applications in 1∶1 hydrofluoric acid and ethanol solutions and chemical oxidation in 20% nitric acid solutions. Their surface morphologies and optical properties were characterized by scanning electron microscope (SEM) and Raman spectrometer, and compared with those obtained by constant current application. More uniform pore formation on p(100) silicon wafers was observed by pulse current application. Illumination with an ultraviolet lamp during the pulse current application accelerated the macropore formation, accordingly, the optical properties were changed.

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[1] ChengX ,LiuFM ,WenZXetal.Fabricationsandcharacterizationsofporoussiliconbytwo -steptech niques ,I:ConstantCurrentApplication[J].Electrochemistry(inChinese) ,2 0 0 1,6 (4 ) ,399~ 4 0 5.

[2 ] BrandtMS ,FuchsHD ,StutzmannM ,etal.Theoriginofvisibleluminescencefrom‘poroussilicon’ :Anewinterpretation[J].SolidStateCommun .1992 ,81(4 ) ,30 7~ 312 .



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