Polishing Rate and Dependent Factors of Copper in NH₃·H₂O Aqueous Solution Containing K₃Fe(CN)₆ during CMP

Authors

Han-wei HE, Coll. of Chem. and Chem. Engin. of Central South Univ., Changsha 410083, ChinaFollow
Yue-hua HU, Dept. of Mineral Engin. of Central South Univ., Changsha 410083, China
Ke-long HUANG, Coll. of Chem. and Chem. Engin. of Central South Univ., Changsha 410083, China

Corresponding Author

Han-wei HE(hehanwei@csu.edu.cn)

Abstract

Dependence of polishing rates of copper on concentrations of NH₃·H₂O, passivator K₃[Fe(CN)₆], γ-Al₂O₃ abrasives and polishing pressures, polishing rotative rates were studied. Dependent mechanisms were explained. It was shown a linear relation between polishing and polishing pressures and rotative rates within some range, non-linear relation between polishing and various reagent concentrations. Preston coefficient was varied. CMP recipe of the best polishing rate was gained: 4%K₃Fe(CN)₆+1%NH₃·H₂O+25%γ-Al₂O₃, K_p=0.023 83. Technics conditions were 300 rpm and 80 kpa. The best polishing effect was R_a=50 nm, R_max =400 nm.

Keywords

Copper, CMP, Polishing rate, Dependent factors

DOI Link

https://doi.org/10.61558/2993-074X.3289

Publication Date

2002-05-28

Online Available Date

2002-05-28

Revised Date

2002-01-28

Received Date

2001-10-14

Recommended Citation

Han-wei HE, Yue-hua HU, Ke-long HUANG. Polishing Rate and Dependent Factors of Copper in NH₃·H₂O Aqueous Solution Containing K₃Fe(CN)₆ during CMP[J]. Journal of Electrochemistry, 2002 , 8(2): 202-206.
DOI: 10.61558/2993-074X.3289
Available at: https://jelectrochem.xmu.edu.cn/journal/vol8/iss2/15