Polishing Rate and Dependent Factors of Copper in NH_3·H _2O Aqueous Solution Containing K _3Fe(CN)_6 during CMP

Authors

Han-wei HE, Coll. of Chem. and Chem. Engin. of Central South Univ.,Changsha,410083,China;
Yue-hua HU, Dept. of Mineral Engin. of Central South Univ.,Changsha,410083,China;
Ke-long HUANG, Coll. of Chem. and Chem. Engin. of Central South Univ.,Changsha,410083,China;

Abstract

Dependence of polishing rates of copper on concentrations of NH 3·H 2O, passivator K 3,γ_Al 2O 3 abrasives and polishing pressures, polishing rotative rates were studied. Dependent mechanisms were explained. It was shown a linear relation between polishing and polishing pressures and rotative rates within some range, non_linear relation between polishing and various reagent concentrations. Preston coefficient was varied. CMP recipe of the best polishing rate was gained: 4%K 3Fe(CN) 6+1%NH 3·H 2O+25%γ-Al 2O 3, K p=0.023 83. Technics conditions were 300 rpm and 80 kpa. The best polishing effect was R a=50 nm, R max =400 nm.

DOI Link

https://doi.org/10.61558/2993-074X.3289

Publication Date

2002-05-28

Online Available Date

2002-05-28

Revised Date

2002-05-28

Received Date

2002-05-28

Recommended Citation

Han-wei HE, Yue-hua HU, Ke-long HUANG. Polishing Rate and Dependent Factors of Copper in NH_3·H _2O Aqueous Solution Containing K _3Fe(CN)_6 during CMP[J]. Journal of Electrochemistry, 2002 , 8(2): Article 15.
DOI: 10.61558/2993-074X.3289
Available at: https://jelectrochem.xmu.edu.cn/journal/vol8/iss2/15