Pure HAP Film Prepared by Direct Electrodepositing on Metallic Surface and Its Mechanism

Authors

Hao-bing HU, State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China;
Chang-jian LIN, State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China;
Fei CHEN, State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China;
Ren HU, State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China;
Ming GUO, State Key Laboratory for Physical Chemistry of Solid Surfaces, Department of Chemistry, Department of Materials Science and Engineering, Xiamen University, Xiamen 361005,China;

Abstract

In controlling concentration of Ca 2+ and PO 4 3- in electrodeposition solution, the HAP film on Ti alloy has been deposited directly. Using XRD and SEM we have learned that prepared HAP is intact in crystal and equal in dimension. Thermodynamic calculation indicated that the HAP is easer formation of than that TCP of. With the XRD, SEM analyses and thermodynamic calculation, the electrodeposition mechanism has been discussed. It was proved that electrodepositon is a two_stage process and formation of HAP is a direct process from solution ions to HAP crystal without precursor.

Keywords

Hydroxyapatite, Ceramic, Film, Mechanism

DOI Link

https://doi.org/10.61558/2993-074X.1461

Publication Date

2002-08-28

Online Available Date

2002-08-28

Revised Date

2002-08-28

Received Date

2002-08-28

Recommended Citation

Hao-bing HU, Chang-jian LIN, Fei CHEN, Ren HU, Ming GUO. Pure HAP Film Prepared by Direct Electrodepositing on Metallic Surface and Its Mechanism[J]. Journal of Electrochemistry, 2002 , 8(3): 288-294.
DOI: 10.61558/2993-074X.1461
Available at: https://jelectrochem.xmu.edu.cn/journal/vol8/iss3/3

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