Electrochemical and in-situ Scanning Tunneling Microscopy Studies on the Sb Underpotential Deposition on Cu Single Crystal Electrodes

Authors

Ji-hong WU, Chemistry Department, Xiamen University, Xiamen 361005, China;
Jia-wei YAN, Chemistry Department, Xiamen University, Xiamen 361005, China;
Jing TANG, Chemistry Department, Xiamen University, Xiamen 361005, China;
Wen-yun HU, Chemistry Department, Xiamen University, Xiamen 361005, China;
Bing-wei MAO, Chemistry Department, Xiamen University, Xiamen 361005, China;

Corresponding Author

Bing_wei MAO

Abstract

We report electrochemical and in_situ STM studies on Sb UPD onto Cu(111) and Cu(100) electrode surfaces in HClO4 and H2SO4 solutions. The results indicate that the electrode surface structure as well as anion can considerably influence Sb UPD. Sb UPD on Cu(100) forms open adlayer structures, which is accompanied by surface alloying due to the more open structure of the (100) surface, On Cu(111), a more compact Sb adlayer is formed instead. Anion adsorption influences the dynamics as well as the adlayer structure of Sb UPD. Owing to the strong adsorption of SO42-, the UPD of Sb on Cu(111) in H2SO4 solution initiates at the edge of the terrace followed by spreading towards the centre of the terrace. But in HClO4 solution, atomic height Sb islands are formed on Cu(111). On Cu(100), a (22×22) R45°( superstructure is formed in HClO4 solution. In contrast, a (4×4)superstructure is observed in co_adsorption with SO42- in H2SO4 solution.

DOI Link

https://doi.org/10.61558/2993-074X.1523

Publication Date

2003-11-28

Online Available Date

2003-11-28

Revised Date

2003-11-28

Received Date

2003-11-28

Recommended Citation

Ji-hong WU, Jia-wei YAN, Jing TANG, Wen-yun HU, Bing-wei MAO. Electrochemical and in-situ Scanning Tunneling Microscopy Studies on the Sb Underpotential Deposition on Cu Single Crystal Electrodes[J]. Journal of Electrochemistry, 2003 , 9(4): 393-401.
DOI: 10.61558/2993-074X.1523
Available at: https://jelectrochem.xmu.edu.cn/journal/vol9/iss4/3

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