Authors
Zi-Hao Song, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
Wei-Bin Wang, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; College of Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Xiao-Hui Liu, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Xiao-Min Han, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Yi Zhou, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Rui Huang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Yan-Xia Jiang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Zhe Li, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, ChinaFollow
Xiao-Wei Liu, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, ChinaFollow
Mei-Ling Xiao, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, ChinaFollow
Hong-Gang Liao, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, ChinaFollow
Wei-Lin Xu, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Rong Sun, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
Corresponding Author
Zhe Li (zhe.li@siat.ac.cn);
Xiao-Wei Liu (xw.liu@siat.ac.cn);
Mei-Ling Xiao (mlxiao@ciac.ac.cn);
Hong-Gang Liao (hgliao@xmu.edu.cn)
Abstract
Redistribution Layer (RDL), composed of layered dielectrics and electroplated copper materials, is a basic structure to rearrange numerous I/O pads on the chip surface in wafer-level advanced packaging. As the key chemicals in electrolyte baths, electroplating additives have undergone continuous development to meet the industrial needs for high-speed and fine-line/fine-pitch applications. Meanwhile, the intricate relationships between additive chemical structures and electroplated copper properties are yet to be well understood. In this work, a pair of triphenylmethane-based dye molecules, i.e., gentian violet (GV) and methyl green (MG), was comparatively investigated as levelers for high-speed RDL copper electroplating. Compared to GV, significantly stronger electrochemical polarization and tunable deposit morphology can be achieved by MG with just one extra quaternized amine terminal. Combining quantum chemical computations, in situ spectroelectrochemical analyses, and microstructural characterization, it is found that MG possesses enhanced electrostatic adsorption, surface coverage and multi-additive synergies, enabling tailored copper trace morphology. This study elaborates the adsorption mechanism and screening criteria of triphenylmethane-derived levelers, and presents a candidate additive structure for high-speed copper electroplating.
Graphical Abstract

Keywords
Redistribution layer, Copper electroplating leveler, Theoretical computation, In situ spectroelectrochemical analysis, Microstructural characterization
Publication Date
2026-02-28
Online Available Date
2025-10-28
Recommended Citation
Zi-Hao Song, Wei-Bin Wang, Xiao-Hui Liu, Xiao-Min Han, Yi Zhou, Rui Huang, Yan-Xia Jiang, Zhe Li, Xiao-Wei Liu, Mei-Ling Xiao, Hong-Gang Liao, Wei-Lin Xu, Rong Sun.
Triphenylmethane-Derived Levelers for High-Speed Redistribution Layer Copper Electroplating of Tailored Surface Morphologies[J]. Journal of Electrochemistry,
2026
,
32(2): 2509091.
DOI: 10.61558/2993-074X.3591
Available at:
https://jelectrochem.xmu.edu.cn/journal/vol32/iss2/2