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Authors

Zi-Hao Song, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, China
Wei-Bin Wang, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China; College of Engineering, Southern University of Science and Technology, Shenzhen, 518055, China
Xiao-Hui Liu, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Xiao-Min Han, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Yi Zhou, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Rui Huang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Yan-Xia Jiang, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
Zhe Li, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, ChinaFollow
Xiao-Wei Liu, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, ChinaFollow
Mei-Ling Xiao, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, ChinaFollow
Hong-Gang Liao, State Key Laboratory of Physical Chemistry of Solid Surfaces, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, ChinaFollow
Wei-Lin Xu, State Key Laboratory of Electroanalytic Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, China; School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, China
Rong Sun, Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China

Corresponding Author

Zhe Li (zhe.li@siat.ac.cn);
Xiao-Wei Liu (xw.liu@siat.ac.cn);
Mei-Ling Xiao (mlxiao@ciac.ac.cn);
Hong-Gang Liao (hgliao@xmu.edu.cn)

Abstract

Redistribution Layer (RDL), composed of layered dielectrics and electroplated copper materials, is a basic structure to rearrange numerous I/O pads on the chip surface in wafer-level advanced packaging. As the key chemicals in electrolyte baths, electroplating additives have undergone continuous development to meet the industrial needs for high-speed and fine-line/fine-pitch applications. Meanwhile, the intricate relationships between additive chemical structures and electroplated copper properties are yet to be well understood. In this work, a pair of triphenylmethane-based dye molecules, i.e., gentian violet (GV) and methyl green (MG), was comparatively investigated as levelers for high-speed RDL copper electroplating. Compared to GV, significantly stronger electrochemical polarization and tunable deposit morphology can be achieved by MG with just one extra quaternized amine terminal. Combining quantum chemical computations, in situ spectroelectrochemical analyses, and microstructural characterization, it is found that MG possesses enhanced electrostatic adsorption, surface coverage and multi-additive synergies, enabling tailored copper trace morphology. This study elaborates the adsorption mechanism and screening criteria of triphenylmethane-derived levelers, and presents a candidate additive structure for high-speed copper electroplating.

Graphical Abstract

Keywords

Redistribution layer, Copper electroplating leveler, Theoretical computation, In situ spectroelectrochemical analysis, Microstructural characterization

Creative Commons License

Creative Commons Attribution 4.0 International License
This work is licensed under a Creative Commons Attribution 4.0 International License.

Publication Date

2026-02-28

Online Available Date

2025-10-28

Revised Date

2025-10-17

Received Date

2025-09-09

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